| PART |
Description |
Maker |
| APT6045SVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 15A 0.450 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12060LVR APT12060B2VR |
POWER MOS V 1200V 20A 0.600 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| RHRP15120 |
15A, 1200V Hyperfast Diode
|
Fairchild Semiconductor
|
| CRNA20-800 CRNB20-800 CRNA20-1200 CRNB20-1200 CRNA |
20Amp - 400/600/800/1200V - RECTIFIER 20Amp - 400/600/800/1200V -整流
|
Electronic Theatre Controls, Inc.
|
| 6MBI15S-120 |
IGBT MODULE ( S series)1200V / 15A
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| RJH1CM5DPQ-E013 |
1200V - 15A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
| FGA15N120FTD |
1200V, 15A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| RJK1051DPB-00-J5 RJK1051DPB-15 |
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching
100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
